Scope and Objectives

We aim to develop circuit design kit using ASM-GaN model and distribute this to the industry for RF and high power product development. Moreover this technology and end products will be used in defense and space applications. Our solution will be based on ASM-GaN model which is in the final phase of industry standardization at Compact Model Coalition.

Deliverables

This project has following major deliverables - * Turn-key design kit for RF and power circuit/product development * Demonstration on RF and power electronics modules * Technology transfer to companies/laboratories * Intellectual property in the form of Journal Articles, Conference proceedings and Patents.

Scientific Output

This project has following major deliverables: * Turn-key design kit for RF and power circuit/product development * Demonstration on RF and power electronics modules * Technology transfer to companies/laboratories * Intellectual property in the form of Journal Articles, Conference proceedings and Patents

Results and outcome till date

The ASM-HEMT (Advanced SPICE Model for High Electron Mobility Transistor) has been selected as world's first industry standard compact model for GaN HEMTs. The model is being implemented in commercial software. The design kit is under development for defense and space applications.

Societal benefit and impact anticipated

Next steps

To improve the robustness of the model - Support companies implement our model in their software tools - Design and fabricate GaN Circuits and model validation on measured data

Publications and reports

1. S. Khandelwal, Y. S. Chauhan, T. A. Fjeldly, S. Ghosh, A. Pampori, D. Mahajan, R. Dangi, and S. A. Ahsan, "ASM GaN: Industry Standard Model for GaN RF and Power Devices -

Patents

Scholars and Project Staff

Completed PhD thesis- 1. Sheikh Aamir Ahsan - "Modeling and Analysis of GaN HEMTs for Power-Electronics and RF Applications" Ongoing PhD thesis- 1. Ahtisham ul Haq - Compact Modeling of GaN HEMTs for high power RF circuits 2. Raghvendra Dangi - Modeling of GaN HEMTs for RF circuit design 3. Mohd Zaid - RF Circuit Design using GaN HEMTs 4. Neha Bajpai - Analysis and Modeling of GaN Power Transistors

Challenges faced

Less than 50% funding received till now. Project work has almost stopped due to funding.

Other information