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GaN HEMT based circuit design solutions and product demonstration for defense and space applications

Primary Information

Domain

Nano-Technology Hardware

Project No.

5223

Sanction and Project Initiation

Sanction No: 5223

Sanction Date: 17/03/2017

Project Initiation date: 21/03/2017

Project Duration: 36

Partner Ministry/Agency/Industry

DRDO

 

Role of partner: To help and evaluate in the development of robust compact modeling solution for GaN circuits.

 

Support from partner:

Principal Investigator

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Yogesh Singh Chauhan
Indian Institute of Technology Kanpur

Host Institute

Co-PIs

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Sandeep Anand
Indian Institute of Technology Kanpur

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Kumar Vaibhav Srivastava
Indian Institute of Technology Kanpur

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Sourabh Khandelwal
University of California Berkeley, USA

 

Scope and Objectives

We aim to develop circuit design kit using ASM-GaN model and distribute this to the industry for RF and high power product development. Moreover this technology and end products will be used in defense and space applications. Our solution will be based on ASM-GaN model which is in the final phase of industry standardization at Compact Model Coalition.

Deliverables

This project has following major deliverables - * Turn-key design kit for RF and power circuit/product development * Demonstration on RF and power electronics modules * Technology transfer to companies/laboratories * Intellectual property in the form of Journal Articles, Conference proceedings and Patents.

 

Scientific Output

This project has following major deliverables: * Turn-key design kit for RF and power circuit/product development * Demonstration on RF and power electronics modules * Technology transfer to companies/laboratories * Intellectual property in the form of Journal Articles, Conference proceedings and Patents

 

Results and outcome till date

The ASM-HEMT (Advanced SPICE Model for High Electron Mobility Transistor) has been selected as world's first industry standard compact model for GaN HEMTs. The model is being implemented in commercial software. The design kit is under development for defense and space applications.

 

Societal benefit and impact anticipated

 

Next steps

To improve the robustness of the model - Support companies implement our model in their software tools - Design and fabricate GaN Circuits and model validation on measured data

Publications and reports

1. S. Khandelwal, Y. S. Chauhan, T. A. Fjeldly, S. Ghosh, A. Pampori, D. Mahajan, R. Dangi, and S. A. Ahsan, "ASM GaN: Industry Standard Model for GaN RF and Power Devices -

Patents

 

Scholars and Project Staff

Completed PhD thesis- 1. Sheikh Aamir Ahsan - "Modeling and Analysis of GaN HEMTs for Power-Electronics and RF Applications" Ongoing PhD thesis- 1. Ahtisham ul Haq - Compact Modeling of GaN HEMTs for high power RF circuits 2. Raghvendra Dangi - Modeling of GaN HEMTs for RF circuit design 3. Mohd Zaid - RF Circuit Design using GaN HEMTs 4. Neha Bajpai - Analysis and Modeling of GaN Power Transistors

Challenges faced

Less than 50% funding received till now. Project work has almost stopped due to funding.

Other information

 

Financial Information

  • Total sanction: Rs. 13900000

  • Amount received: Rs. 5500000

  • Amount utilised for Equipment: 0

  • Amount utilised for Manpower: Rs. 16.06 lakhs

  • Amount utilised for Consumables: Rs. 45.91 lakhs

  • Amount utilised for Contingency: Rs. 2.54 lakhs

  • Amount utilised for Travel: Rs. 1.96 lakhs

  • Amount utilised for Other Expenses: 0

  • Amount utilised for Overheads: Rs. 18.33 lakhs

Equipment and facilities

 

Semiconductor Device Characterization Lab and related consumables/accessories