Decrease size
Reset to Default
Increase size

Ultra high efficiency CMOS compatible Si/Ge Single Nanowire Photodetectors in Infrared and THz Wavelengths for Defence and Security Applications

Primary Information


Security & Defence

Project No.


Sanction and Project Initiation

Sanction No: F. No. 3-18/2015-T.S.-I(Vol.IV)

Sanction Date: 17/05/2017

Project Initiation date: 24/08/2017

Project Duration: 36

Partner Ministry/Agency/Industry



Role of partner:Specification of the devices in terms of wavelength range, responsivity and detectivity of the fabricated photodetectors


Support from partner:SSPL, DRDO Scientists are providing the feedback in achieving the device specifications. Results have been discussed with the Scientists for knowledge sharing and further improvements to achieve the project goals.

Principal Investigator

PI Image

Prof. Samit Kumar Ray
Indian Institute of Technology Kharagpur

Host Institute


PI Image

Dr. Samaresh Das
IIT Delhi

PI Image

Prof. Ananjan Basu
IIT Delhi

PI Image

Prof. Partha RoyChaudhuri
IIT Kharagpur


Scope and Objectives

1. To develop ultra-high efficiency infrared photodetectors based on silicon and germanium single nanowires and their arrays for military applications using MSM and transistor devices. 2.Fabrication of CMOS compatible devices using VLS and chemically etched nanowires using electron and focussed ion beam lithography techniques. 3.Device testing: Responsivity, Signal to noise ratio, frequency bandwidth. 4. Demonstration of a prototype for IR and THz detectors with high responsivity and detectivity.


Ultra -high efficiency CMOS nanowire photodetectors to detect light power belowpW. Germanium single nanowire MSM photodetector: Responsivity >1A/W, wavelengths range:800-1700 nm2. Development of junctionless transistor technology for THz radiation detection. Range: 0.3-0.9 THz, Voltage responsivity>1V/W,Silicon single nanowire MSM photodetectors:Responsivity higher than 103 A/W, wavelengths range: (600-1000 nm), Detectivity higher than:5x1011 cm.Hz1/23. Building of prototypes of the above devices/W IMPRINT Proposal (5318):Ultra -high efficiency CMOS compatible Si/Ge Single Nanowire Photodetectors in Infrared andTHz Wavelengths for Defence and Security Applications.


Scientific Output

1. Development of technology for infrared detector 2. Improvement of performance by using nanowire 3. Understanding the interaction of THz E-M wave in nano materials


Project image

Results and outcome till date

Developed polarization sensitive nanowire photodetectors Silicon Nanowire phototransitors with different nanoeire diameter was fabricated and tested. Heterojunction photodetector based on Ge-MoSe2 heterojunction was fabricated and characterized for self powered photodetector applications. Flexible photodetector based on MoSe2 on PET substrate was fabricated. Germanium Micro disk photodetectors were fabricated and characterised


Project image
Project image
Project image
Project image
Project image

Societal benefit and impact anticipated

Security and defence applications

Next steps

1. Fabrication of arrays of nanowire IR detector 2. THz detector fabrication and testing using MBE grown Ge epilayer on SOI 3. Prototyping of IR detectors

Publications and reports

Highly Responsive, Polarization Sensitive, Self-biased Single GeO2 Ge Nanowire Device for Broadband and Low Power Photodetectors, S Mukherjee, K Das, S Das, SK Ray, ACS Photonics 5 4170 2018 Self-powered room temperature broadband infrared photodetector based on MoSe2/Germanium heterojunction with 35A/W responsivity at 1550 nm Veerendra Dhyani, Mrinmay Das, Wasi Uddin, Pranaba Kishor Muduli, Samaresh Das. Appl. Phys. Lett. 114, 121101, 2019. Low cost flexible 1.1 um -1.6 um photodetector fabricated by hydrothermal grown large area MoSe2 nanostructures Veerendra Dhyani, Preeti Kumari, Sarmistha Maity, Samaresh Das. Proceedings Volume 11028, Optical Sensors 2019. Diameter-dependent photoresponse with high internal gain in a back gated single Si nanowire phototransistor. Veerendra Dhyani, Alka Jakhar, John Wellington J and Samaresh Das. J. Phys. D: Appl. Phys. 52, 425103, 2019.


One Submitted to IIT patent office

Scholars and Project Staff

Two PhD full time, two Research Associate full time

Challenges faced


Other information

The project has officially started on 24/08/2017 after the release of first installment of grant

Financial Information

  • Total sanction: Rs. 26856000

  • Amount received: Rs. 18702000

  • Amount utilised for Equipment: Rs. 5729000

  • Amount utilised for Manpower: Rs. 1125000

  • Amount utilised for Consumables: Rs. 5336000

  • Amount utilised for Contingency: Rs. 997000

  • Amount utilised for Travel: Rs. 144000

  • Amount utilised for Other Expenses: 0

  • Amount utilised for Overheads: Rs. 3381000

Equipment and facilities


Leukos Electro MIR Mid IR Supercontinuum Laser Model No. Electro MIR 4.1 (800 nm to 4100 nm) Measurement Setup for Mid-IR Photodetection using Mid IR Source, Filters and probestation